High Purity 98% Aluminium nitride 3-5um AIN CAS 24304-00-5

Description of Aluminium nitride 

Boiling point:2249℃

  Application of Aluminium nitride 

It has been reported that most of the research today is on the development of a light emitting diode based on a semiconductor (gallium nitride or alloyed aluminium gallium nitride) and operating in the ultraviolet, with a wavelength of light of 250 nm. In May 2006 it was reported that an inefficient diode could emit light waves at a wavelength of 210 nm [1]. A single aluminium nitride crystal has an energy gap of 6.2 eV measured in terms of vacuum UV reflectance. Theoretically, the energy gap allows some waves with a wavelength of approximately 200 nm to pass through. However, there are a number of difficulties to overcome when implementing this commercially. Applications for aluminium nitride in optoelectronic engineering include the use as a dielectric layer in optical storage interfaces and electronic substrates, as a wafer carrier with high thermal conductivity, and for military applications.

Due to the piezoelectric effect of aluminium nitride, the epitaxial stretching of aluminium nitride crystals is also used for detectors of surface acoustic waves. The detectors are then placed on silicon wafers. There are very few places where these fine films can be reliably manufactured.

Aluminium nitride ceramics are used as heat exchanger materials for high-temperature structural components, for example, because of their high room and high-temperature strength, low coefficient of expansion and good thermal conductivity.